Radio Frequency Power Performance Enhancement for Asymmetric Lightly Doped Drain Metal–Oxide–Semiconductor Field-Effect Transistors on SiC Substrate
| Autor: | Kuo-Yang Horng, Hsuan-Ling Kao, Szu-Ling Liu, Tsu Chang, Albert Chin, J.D.-S. Deng |
|---|---|
| Rok vydání: | 2010 |
| Předmět: |
Power gain
Power-added efficiency Materials science Physics and Astronomy (miscellaneous) Silicon business.industry Transistor Doping General Engineering General Physics and Astronomy chemistry.chemical_element Radio frequency power transmission law.invention chemistry law MOSFET Optoelectronics Field-effect transistor business |
| Zdroj: | Japanese Journal of Applied Physics. 49:014104 |
| ISSN: | 1347-4065 0021-4922 |
| DOI: | 10.1143/jjap.49.014104 |
| Popis: | In this paper we report the DC characteristics and radio frequency (RF) power performance improvement as high as 6.6% of asymmetric lightly doped drain metal–oxide–semiconductor field-effect transistors (asymmetric LDD MOSFET, AMOSFET) with 50-µm-thick silicon substrates on SiC substrates. The self-heating and parasitic effects of large size AMOSFETs with 50-µm-thick silicon on SiC substrates are reduced owing to good heat dissipation and less lossy behaviors of thinned silicon substrates and SiC substrates. Therefore, the power gain, saturation output power, and power added efficiency of AMOSFETs with 50-µm-thick Si substrates mounted on SiC substrates is improved. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|