Electrical spin injection into InGaAs quantum dots

Autor:	J. Lupaca-Schomber, J. Fallert, T. Passow, Dagmar Gerthsen, Heinz Kalt, B. Daniel, Wolfgang Löffler, J. Kvietkova, Dimitri Litvinov, Michael Hetterich, D. Tröndle, E. Tsitsishvili
Rok vydání:	2006
Předmět:	Physics Photon Condensed matter physics Spin polarization Quantum dot Emission spectrum Electron Magnetic semiconductor Atomic physics Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Polarization (waves) Circular polarization
Zdroj:	physica status solidi c. 3:2406-2409
ISSN:	1610-1642 1862-6351
Popis:	We report on the injection of electron spins into InGaAs quantum dots with an efficiency of up to 60%. This injection is observed in p-i-n light-emitting diode structures using the diluted magnetic semiconductor ZnMnSe as spin aligner (spin-LED). The degree of spin polarization is deduced from the circular polarization degree of the photons emitted when the injected electrons recombine in the quantum dots with unpolarized holes. We observe a strong energy dependence of the polarization degree with a strong increase starting from zero to a high value on the high energy side of the emission spectrum. To study the origin of this dependence, we compare results of two quantum-dot samples with emission peaks at 1.2 eV and 1.33 eV, respectively. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::93fdfa1c39a0c8131c9813e5e8333dfa https://doi.org/10.1002/pssc.200668004 Zobrazit plný text záznamu Plný text