Carrier leakage in blue‐green II–VI semiconductor lasers

Autor:	Kevin W. Haberern, J. M. Gaines, Khalid Shahzad, Maarten Buijs, Sharon J. Flamholtz
Rok vydání:	1995
Předmět:	Materials science Physics and Astronomy (miscellaneous) business.industry Optoelectronics Carrier leakage Electron Visible radiation Conductivity business Cladding (fiber optics) Quantum well Semiconductor laser theory Leakage (electronics)
Zdroj:	Applied Physics Letters. 67:1987-1989
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.114762
Popis:	Carrier confinement in blue‐green II–VI semiconductor lasers was investigated. For devices longer than 300 μm an energy barrier of 260–280 meV was found to confine the electrons, the carrier being mainly responsible for leakage, within the active region. Shorter devices show more leakage due to an increased importance of mirror losses which require higher threshold gain. Due to the low conductivity of the p‐type cladding layer there is a sizable contribution of drift to the total leakage current.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::93eac8acc6f5e2377837df0bfe241a53 https://doi.org/10.1063/1.114762 Zobrazit plný text záznamu