Middle of Line (MOL) Process Investigation in Ring Oscillator failure

Autor: Samuel S. Choi, Jay W. Strane, Victor Chan, Sean Teehan, James Chingwei Li, C. Le, James J. Demarest, Marc A. Bergendahl, A. Gaul, Dechao Guo, Andrew M. Greene
Rok vydání: 2020
Předmět:
Zdroj: 2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
Popis: Ring Oscillators (ROs) are used for yield learning during the research phase of a CMO technology. We performed cross-sections and showed that the open and short defects are in the middle of line (MOL) gate structures. The defects which are related to MOL or prior processes, as well as the design and density, will be discussed in the paper.
Databáze: OpenAIRE