Transient effects in PD SOI NMOSFETs
| Autor: | Serguei Okhonin, J. Pontcharra, Sorin Cristoloveanu, Mikhail Nagoga, O. Faynot, P. Fazan, Jean-Michel Sallese |
|---|---|
| Rok vydání: | 2001 |
| Předmět: |
Materials science
business.industry Silicon on insulator Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Impact ionization Depletion region Ionization MOSFET Optoelectronics Waveform Transient (oscillation) Electrical and Electronic Engineering business Voltage |
| Zdroj: | Microelectronic Engineering. 59:469-473 |
| ISSN: | 0167-9317 |
| DOI: | 10.1016/s0167-9317(01)00645-1 |
| Popis: | We investigated the transients in 0.25 μm PD SOI devices. A good agreement between experimental and simulation results has been observed. The exponential dependence of the switch-on transient time on the reciprocal drain voltage for both p- and n-channel devices is explained by the predominance of the impact ionisation mechanism. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect