| Autor: | Lis K. Nanver, Q.W. Ren, C.C.G. Visser, J.W. Slotboom |
|---|---|
| Rok vydání: | 2001 |
| Předmět: |
Materials science
Thin layers Silicon business.industry Doping chemistry.chemical_element Substrate (electronics) Condensed Matter Physics Epitaxy Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials chemistry Optoelectronics Wafer Electrical and Electronic Engineering business Layer (electronics) Diode |
| Zdroj: | Journal of Materials Science: Materials in Electronics. 12:313-316 |
| ISSN: | 0957-4522 |
| DOI: | 10.1023/a:1011240226921 |
| Popis: | Ultra-shallow diodes have been fabricated by epitaxially growing thin layers of highly doped Si or strained SiGe on silicon substrate wafers and contacting with Al/1%Si. Ideal diode I –V characteristics were achieved for both n+p and p+n junctions as shallow as 20 nm. The formation of silicon precipitates on the contact surface as a result of alloying after metallization was found to be impeded by increasing the Ge content of the epitaxially grown layer. For a concentration of 27%, no precipitates were observed. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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