Room-temperature two-terminal characteristics in silicon nano wires
| Autor: | W.Z. Wong, Tiao-Yuan Huang, Y.G. Wu, Shu Fen Hu, Chin-Lung Sung, Simon M. Sze, S.S. Liu |
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| Rok vydání: | 2003 |
| Předmět: |
Materials science
Silicon business.industry Nanowire Coulomb blockade Silicon on insulator chemistry.chemical_element Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter::Materials Science Nanolithography chemistry Electrical resistivity and conductivity Nano Optoelectronics business Electron-beam lithography |
| Zdroj: | Proceedings of the 2nd IEEE Conference on Nanotechnology. |
| Popis: | Quantum effects in silicon nano wires due to 1-dimensional carrier confinement were observed at room temperature. Electrical transport properties were measured on narrow thin-silicon-on-insulator wires that were defined by e-beam lithography and further narrowed and thinned down by oxidation to a final thickness of around 3 nm, and a width of 29 nm. The room-temperature current-voltage characteristics of the resulting silicon nano wires were shown to exhibit a zero current state may be due to the occurrence of Coulomb blockade. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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