Thermal hillocks on half-micron aluminum lines: the next reliability issue?

Autor: C.A. Pico, T.D. Bonifield
Rok vydání: 2002
Předmět:
Zdroj: 1991 Proceedings Eighth International IEEE VLSI Multilevel Interconnection Conference.
DOI: 10.1109/vmic.1991.152996
Popis: Thermally induced Al hillocks cause manufacturing and reliability problems in integrated devices. These thermal hillocks, which form during the sinter process, interfere with the uniformity of subsequent spin-on materials (e.g. photoresist) and can create pinholes susceptible to corrosion or electrical breakdown. Thermal hillocks have both lateral and vertical dimensions on the order of 1 mu m. The authors find that thermal hillocks are present on lines having linewidths greater than 3 mu m, absent on lines having linewidths between 0.8 mu m and 3 mu m, and, again, present on lines having linewidths of 0.6 mu m. These last hillocks are defined as line hillocks to distinguish them from hillocks occurring in the wider areas. >
Databáze: OpenAIRE