Continuous-Wave Laser Lateral Crystallization of A-Si Thin Films on Polyimide Using a Heatsink Layer Embedded in the Buffer SiO2
| Autor: | Yukiharu Uraoka, Muhammad Arif, Nobuo Sasaki, Shigeto Sugimoto, Jun Gotoh |
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| Rok vydání: | 2021 |
| Předmět: |
010302 applied physics
Materials science 02 engineering and technology Substrate (electronics) 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Buffer (optical fiber) Electronic Optical and Magnetic Materials Amorphous solid law.invention law 0103 physical sciences Materials Chemistry Continuous wave Electrical and Electronic Engineering Thin film Crystallization Composite material 0210 nano-technology Layer (electronics) Polyimide |
| Zdroj: | Journal of Electronic Materials. 50:2974-2980 |
| ISSN: | 1543-186X 0361-5235 |
| DOI: | 10.1007/s11664-021-08751-9 |
| Popis: | Continuous-wave laser crystallization of amorphous Si (a-Si) thin films on a polyimide (PI)-coated glass substrate is studied by using a single scan of a highly uniform top-flat line-beam with a 123 nm SiO2 cap layer and a thin buffer layer at room temperature in air. The total buffer layer thickness is reduced to as thin as 1.55 μm including the heatsink a-Si layer and two SiO2 layers. Damage to the polyimide during the crystallization is successfully suppressed by the heatsink layer. An 88.3% {100} surface fraction is obtained for a 60-nm-thick Si thin film within 15° on polyimide even with a low scan velocity of 15 mm/s. |
| Databáze: | OpenAIRE |
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