Optimization of the $\hbox{Al}_{2}\hbox{O}_{3}/ \hbox{GaSb}$ Interface and a High-Mobility GaSb pMOSFET

Autor:	Krishna C. Saraswat, Yoshio Nishi, Brian R. Bennett, Toshifumi Irisawa, Ze Yuan, J.B. Boos, Aneesh Nainani
Rok vydání:	2011
Předmět:	Electron mobility Materials science business.industry Band gap Gate dielectric Dangling bond Electronic Optical and Magnetic Materials Ion implantation Semiconductor MOSFET Electronic engineering Optoelectronics Field-effect transistor Electrical and Electronic Engineering business
Zdroj:	IEEE Transactions on Electron Devices. 58:3407-3415
ISSN:	1557-9646 0018-9383
DOI:	10.1109/ted.2011.2162732
Popis:	While there have been many demonstrations on n-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) in III-V semiconductors showing excellent electron mobility and high drive currents, hole mobility in III-V p-channel MOSFETs (pMOSFETs) has traditionally lagged in comparison to silicon. GaSb is an attractive candidate for high-performance III-V pMOSFETs due to its high bulk hole mobility. We fabricate and study GaSb pMOSFETs with an atomic layer deposition Al2O3 gate dielectric and a self-aligned source/drain formed by ion implantation. The band offsets of Al2O3 on GaSb were measured using synchrotron radiation photoemission spectroscopy. The use of a forming gas anneal to passivate the dangling bonds in the bulk of the dielectric was demonstrated. The density of interface states Dit was measured across the GaSb band gap using conductance measurements, and a midband-gap Dit of 3 × 1011/cm2 eV was achieved. This enabled pMOSFETs with a peak hole mobility value of 290 cm2/Vs.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::93c6177ae3ff8ce1bd8adb6631fdfa37 https://doi.org/10.1109/ted.2011.2162732 Zobrazit plný text záznamu