Investigation of Tb-related green emission in group-III nitrides by time-resolved photoluminescence measurement
| Autor: | Hisayoshi Itoh, Takeshi Ohshima, K. Takemoto, Hiroshi Okada, Akihiro Wakahara, F. Oikawa |
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| Rok vydání: | 2008 |
| Předmět: |
Photoluminescence
Chemistry Doping Analytical chemistry Surfaces and Interfaces Nitride Condensed Matter Physics Mole fraction Green emission Surfaces Coatings and Films Electronic Optical and Magnetic Materials Impurity Materials Chemistry Electrical and Electronic Engineering Luminescence Intensity (heat transfer) |
| Zdroj: | physica status solidi (a). 205:56-59 |
| ISSN: | 1862-6319 1862-6300 |
| DOI: | 10.1002/pssa.200776703 |
| Popis: | Luminescence properties of Tb impurity in AlGaN are investigated various Al composition using time-resolved photoluminescence (TRPL). When the AIN molar fraction is inrreased, the luminescence intensity corresponding to inner-shell transitions in Tb becomes strong. At low-temperatures, 5 D 3 - 7 J j transitions are dominant in AlN-rich samples, whereas 5 D 4 - 7 F J transitions are dominant at high-temperature. Temperature dependence of the transient decay and the luminescence intensity suggest thermally activated energy-transfer process and suppression of energy-back-transfer due to widening of the band-gap. Therefore, the large improvement of PL capability in AlGaN may be due to increase of energy transfer efficiency and/or increase of active Tb impurity. |
| Databáze: | OpenAIRE |
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