AlGaAs/GaInP heterojunction tunnel diode for cascade solar cell application

Autor:	C. A. Parker, Salah M. Bedair, D. Jung, J. Ramdani
Rok vydání:	1993
Předmět:	Materials science business.industry Band gap Inorganic chemistry General Physics and Astronomy Heterojunction Suns in alchemy law.invention Tunnel junction law Solar cell Tunnel diode Atomic layer epitaxy Optoelectronics business Diode
Zdroj:	Journal of Applied Physics. 74:2090-2093
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.354753
Popis:	A p+‐AlGaAs/n+‐GaInP heterojunction tunnel diode with band gap Eg≊1.9 eV was fabricated by the atomic layer epitaxy growth. Doping levels of 1×1020 cm−3 and 5×1019 cm−3 were achieved in the p and n side of the diode using carbon and selenium, respectively. The diode can be used to interconnect the high and low band‐gap cells in the AlGaAs/GaAs cascade solar cell structure. For forward current of 20 A/cm2, which is the expected current density at 1000 suns operation, there is only ∼20 mV voltage drop across the tunnel junction. When annealed at 650 and 750 °C to simulate the growth of the top cell, the diode was still suitable for 1000 suns operation. This is the first reported tunnel diode fabricated in high band‐gap material systems that can be used as the connecting junction in the cascade solar cell structure operating at 1000 suns.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::93afccc19b176e9bf083758c10b2dc8a https://doi.org/10.1063/1.354753 Zobrazit plný text záznamu