Properties of ITO/Ga-Al Doped ZnO Bilayer Thin Film for Saving ITO Material
| Autor: | Kyung Hwan Kim, Yu Sup Jung, Hyung Wook Choi |
|---|---|
| Rok vydání: | 2014 |
| Předmět: |
Materials science
business.industry Bilayer Doping chemistry.chemical_element Nanotechnology General Chemistry Substrate (electronics) Condensed Matter Physics Indium tin oxide chemistry Sputtering Electrical resistivity and conductivity Optoelectronics General Materials Science Thin film business Indium |
| Zdroj: | Molecular Crystals and Liquid Crystals. 602:17-25 |
| ISSN: | 1563-5287 1542-1406 |
| DOI: | 10.1080/15421406.2014.944363 |
| Popis: | The indium tin oxide (ITO) thin films have advantages such as low resistivity (≒ 10−4Ω·cm) and high transmittance (>85%) in visible range. However, Indium in ITO is rare metal, a high cost and toxicity. Therefore, ITO substitute material is necessary. In this study, we fabricated the ITO/Ga-Al doped ZnO (GAZO) bilayer for saving ITO material by using facing targets sputtering methods. The ITO/Ga-Al doped ZnO bilayer thin films were deposited various thicknesses and substrate temperature. As a results, resistivity, mobility and carrier concentration of the ITO(80 nm)/GAZO(100 nm) bilayer thin film at 250°C exhibited 3.79 × 10−4Ω·cm, 31.13cm2/V·s and 5.21×1020cm−3. Average optical transmittances of all ITO/GAZO bilayer thin film exhibited above 90% in visible range. |
| Databáze: | OpenAIRE |
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