| Autor: |
Jingzhi Yin, Shuren Yang, Hongkai Gao, Xiaofeng Sai, Yiding Wang, Xiaoting Li, Jingwei Wang, Tao Wang |
| Rok vydání: |
2006 |
| Předmět: |
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| Zdroj: |
SPIE Proceedings. |
| ISSN: |
0277-786X |
| DOI: |
10.1117/12.667720 |
| Popis: |
Epitaxial layers and monolayer of Ga0.98 In0.02As0.24Sb0.76 quaternary alloys lattice matched to GaSb substrates were grown by our home-made low pressure metal organic chemical vapor deposition (LP-MOCVD). Lattice mis-match (Δa/a~2.5%) between Ga0.98In0.02As0.24Sb0.76 quaternary alloys and GaSb substrate was obtained. Mirrorlike surface morphologies were investigated by SEM and AFM. Undoped Ga0.98In0.02As0.24Sb0.76 epitaxial layers grown on semi-insulated GaAs substrates indicates n-type with carrier density of 1.8×1017cm-3 and electron mobility of 2551 cm2v-1 s-1. Growth at this temperature yielded a root-mean-square (rms) surface roughness of 160 nm. The effects of growth parameters on epitaxial layers were discussed. It is shown that under proper growth conditions, containing growth temperature (570~620°C), V/III ratios (2~6) and flux of carrier gas, smooth and high quality Ga0.98In0.02As0.24Sb0.76 epitaxial layers can be achieved.© (2006) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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