Low-Temperature and Rapid Oxidation of GaN Surface by Saturated Water Vapor at High Pressure

Autor:	Taro Oe, Chiharu Kimura, Hidemitsu Aoki, Takashi Futatsuki, Takashi Sugino, Naoyoshi Komatsu
Rok vydání:	2009
Předmět:	Thermal oxidation Fabrication Physics and Astronomy (miscellaneous) General Engineering Analytical chemistry Oxide General Physics and Astronomy chemistry.chemical_element Nitrogen chemistry.chemical_compound X-ray photoelectron spectroscopy chemistry Wet oxidation Solubility Layer (electronics)
Zdroj:	Japanese Journal of Applied Physics. 48:04C006
ISSN:	1347-4065 0021-4922
DOI:	10.1143/jjap.48.04c006
Popis:	A gallium oxide layer was successfully formed on a GaN surface by saturated water vapor oxidation at a high pressure (350 °C, 16.5 MPa). Ga oxide thickness can be controlled in the 5–1,000 nm range by such oxidation process for 15 min. Saturated water vapor oxidation is a rapid and very low temperature oxidation process compared with the conventional thermal oxidation of GaN. This rapid oxidation potential at a low temperature is attributed to the high density of the oxidizer (H2O) under high-pressure condition. By applying post-treatment with high-pressure hot water, residual nitrogen in the oxide layer is removed and the stoichiometric composition of Ga2O3 is observed by X-ray photoelectron spectroscopy (XPS). The removal of nitrogen from the oxide by the high-pressure hot water is caused by its high solubility of inorganic compounds. Rapid and low-temperature oxidation can be applicable to the fabrication of a high-performance device without thermal stress for GaN-field effect transistors (FETs).
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::937fa3419116e469b426217273c32ed0 https://doi.org/10.1143/jjap.48.04c006 Zobrazit plný text záznamu