MONTE CARLO MODELLING OF 0.1µm DELTA‐DOPED MOSFETs
| Autor: | R.W. Kelsall, A.G. O'Neill |
|---|---|
| Rok vydání: | 1994 |
| Předmět: |
Physics
Electron density Scattering Applied Mathematics Monte Carlo method Doping Thermal conduction Electron transport chain Finite element method Computer Science Applications Computational physics Computational Theory and Mathematics MOSFET Statistical physics Electrical and Electronic Engineering |
| Zdroj: | COMPEL - The international journal for computation and mathematics in electrical and electronic engineering. 13:653-659 |
| ISSN: | 0332-1649 |
| DOI: | 10.1108/eb051882 |
| Popis: | A 2‐dimensional multilayer MOSFET simulator has been developed, based on self‐consistently coupled ensemble Monte Carlo and Finite Element Poisson Solver algorithms. The simulator is used to investigate electron transport in 0.1µm delta‐doped n‐channel MOSFETs. The simulations demonstrate a buried channel mode of operation in these devices, whereby conduction occurs primarily along the delta‐doped layer. In this mode, the electron density at the Si/SiO2 interface is significantly reduced, implying corresponding reductions in interface scattering and hot electron degradation. |
| Databáze: | OpenAIRE |
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