Wettability of polypropylene films coated with SiOx plasma deposited layers
Autor: | Salah Sahli, Z. Ziari, A. Bellel, D. Escaich, Yvan Segui, Patrice Raynaud |
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Rok vydání: | 2006 |
Předmět: |
Materials science
Silicon Analytical chemistry chemistry.chemical_element Surfaces and Interfaces General Chemistry Substrate (electronics) Condensed Matter Physics Surface energy Electron cyclotron resonance Surfaces Coatings and Films Contact angle X-ray photoelectron spectroscopy chemistry Etching (microfabrication) Materials Chemistry Wetting |
Zdroj: | Surface and Coatings Technology. 201:129-135 |
ISSN: | 0257-8972 |
DOI: | 10.1016/j.surfcoat.2005.11.100 |
Popis: | Surface wettability of polypropylene (PP) films has been significantly improved by the deposition of thin SiO x layers, elaborated from a mixture of hexamethyldisiloxane (HMDSO) and oxygen in a microwave DECR (distributed electron cyclotron resonance) plasma reactor (2.45 GHz, 400 W). Contact angle measurements, Atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS) were used to study, respectively, the change in surface free energy, surface topography and chemical composition due to the deposition of thin SiO x layers. Contact angle measurements revealed that the water contact angle value is reduced from about 99° for untreated PP surface to nearly 30° for coated PP film. The polar component of the surface energy is considerably increased from 0.5 to 35 mJ/m 2 . For films deposited in the presence of VUV photons, AFM images showed the growth of irregular structure due to substrate etching effect and the deconvolution results of the Si 2p XPS peaks indicated that the proportion of the partly oxidized silicon environment was the major component. However, for films deposited without the presence of VUV radiation, typical SiO 2 agglomerates can clearly be seen on PP surface at a thickness of about 29 nm and the proportion of the silicon dioxide was the major component. |
Databáze: | OpenAIRE |
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