Microstructure and stoichiometry dependence of ion beam nitrides as a function of energy and temperature: A comparative study between Si and SiGe

Autor:	Nicole Herbots, W. J. Croft, O. Vancauwenberghe, O. C. Hellman, Robert Culbertson
Rok vydání:	1992
Předmět:	Materials science Ion beam X-ray photoelectron spectroscopy Sputtering Transmission electron microscopy Analytical chemistry Surfaces and Interfaces Substrate (electronics) Thin film Nitride Condensed Matter Physics Surfaces Coatings and Films Amorphous solid
Zdroj:	Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 10:1631-1636
ISSN:	1520-8559 0734-2101
DOI:	10.1116/1.577761
Popis:	The microstructure and stoichiometry of nitrides formed by direct low‐energy ion beam nitridation has been investigated as a function of ion energy and substrate temperature for Si(100) and SiGe/Si(100) films. Cross‐sectional transmission electron microscopy, Rutherford backscattering spectroscopy combined with ion channeling and in situ x‐ray photoelectron spectroscopy were used. It was established that a substrate temperature of 700 K produces a homogeneous amorphous nitride layer, whereas lower substrate temperatures decrease the incorporation of nitrogen in the film, while causing the formation of a nitrogen‐poor amorphous layer beneath the nitride film. The N‐to‐Si or N‐to‐(Si+Ge) atomic ratio is found be close to 1.33 at 1 keV and decreases with ion energy. Effects of chemically enhanced physical sputtering of germanium are observed.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::9360a7693beaafc9c6ad83594fb67f14 https://doi.org/10.1116/1.577761 Zobrazit plný text záznamu