Band alignments of O3-based and H2O-based amorphous LaAlO3 films on silicon by atomic layer deposition
| Autor: | Feng Xingyao, Hongxia Liu, Lu Zhao, Xing Wang, Chenxi Fei |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science Silicon Band gap Analytical chemistry chemistry.chemical_element Nanotechnology 02 engineering and technology Dielectric 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Amorphous solid Atomic layer deposition X-ray photoelectron spectroscopy chemistry Impurity 0103 physical sciences Deposition (phase transition) Electrical and Electronic Engineering 0210 nano-technology |
| Zdroj: | Journal of Materials Science: Materials in Electronics. 28:803-807 |
| ISSN: | 1573-482X 0957-4522 |
| DOI: | 10.1007/s10854-016-5593-z |
| Popis: | Amorphous LaAlO3 films were grown on p-type Si substrate by atomic layer deposition using O3 and H2O as the oxygen source, respectively. Band alignments of LaAlO3 films were analyzed by X-ray photoelectron spectroscopy measurements using the photoemission-based method. Extra hydroxyl groups and C and N-related impurities were detected in the H2O-based LaAlO3 film. As a result, the O3-based LaAlO3 dielectric gains higher band gap and band offsets than those of the H2O-based dielectric. Consequently, for the O3-based film, the leakage current of more than one order of magnitude less than that of H2O-based LaAlO3 film was obtained. All the results indicate that O3 is a more appropriate oxidant for the deposition of LaAlO3 dielectric. |
| Databáze: | OpenAIRE |
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