| Popis: |
The examination of synchrotron radiation (SR) lithography of a dry developable negative resist comprising poly(methylisopropenylketone) and 2,6‐di (4’‐azidobenzylidene)‐4‐methylcyclo hexanone‐1 was carried out using the facilities of the storage ring of ETL‐TERAS where the electron energy is 600 MeV, the storage current is 100 mA, the orbital radius is 2 m, and the distance from the source to the sample is 10 m. The results obtained were excellent, i.e., sharp‐shaped and high aspect ratio resist patterns comparable to those of PMMA patterns in SR lithography were easily obtained in a single layer resist with the dry development and contact printing. In the proximity printing, sharp‐shaped patterns were also obtained, but the resolution depends on the conditions of the imagewise exposure although the reproducibility is good. The sensitivities are 1380 mJ/cm2 (approximately equal to PMMA) and 1840 mJ/cm2 in saturation of remaining resist thickness for contact and proximity printings, respectively. The time required for the complete dry development of 4 μm thick resist coatings in an oxygen plasma is only 4 min which is remarkably shorter than the time required for the thick bottom layer in the trilevel process [53 min for 4 μm; Matsui and Endo, Microelectron. Eng. 1, 51 (1983)]. |
