Thick cubic GaN film growth using ultra-thin low-temperature buffer layer by RF–MBE

Autor:	Takeaki Suzuki, Kiyoshi Takahashi, Kouichi Ishida, Masamichi Ouchi, Ryuhei Kimura
Rok vydání:	2005
Předmět:	Diffraction Photoluminescence Reflection high-energy electron diffraction business.industry Chemistry Condensed Matter Physics Amorphous solid Inorganic Chemistry Full width at half maximum Optics Materials Chemistry Optoelectronics Thin film business Layer (electronics) Molecular beam epitaxy
Zdroj:	Journal of Crystal Growth. 278:411-414
ISSN:	0022-0248
DOI:	10.1016/j.jcrysgro.2005.01.058
Popis:	1.8 μm thick high-quality cubic GaN film was successfully grown on GaAs (1 0 0) using an ultra-thin, low-temperature GaN buffer layer by a plasma-assisted molecular beam epitaxy. The ‘as-grown’ low-temperature buffer layer was amorphous and ultra-thin (∼6 A), which is a necessity condition to grow a pure cubic GaN epilayer. FWHM of X-ray rocking curve (c-GaN (2 0 0) diffraction) is as narrow as 28.7 arcmin.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::932b2e984577db1bd0467df7b5fd3206 https://doi.org/10.1016/j.jcrysgro.2005.01.058 Zobrazit plný text záznamu Full Text from ScienceDirect