Study of charge processes in gate dielectrics of MOS structures under concurrent influence of high-field tunnel injection of electrons and ionization radiation

Autor:	D. V. Andreev, V. V. Andreev, A. A. Stolyarov, Vladimir M. Maslovsky
Rok vydání:	2020
Předmět:	Materials science Charge (physics) High field Electron Dielectric Atomic physics Tunnel injection Ionizing radiation
Zdroj:	PROCEEDINGS OF THE XV INTERNATIONAL CONFERENCE «PHYSICS OF DIELECTRICS».
ISSN:	0094-243X
DOI:	10.1063/5.0033553
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::9329e7004fd2f912151f4d475c91a7b7 https://doi.org/10.1063/5.0033553 Zobrazit plný text záznamu