Intrinsic Advantages of SOI Multiple-Gate MOSFET (MuGFET) for Low Power Applications

Autor:	C. Rinn Cleavelin, Ian Cayrefourcq, Klaus Von Arnim, Klaus Schruefer, Mike Ma, C.H. Hsu, Thomas Schulz, Tiehui Liu, Carlos Mazure, Jean-Pierre Colinge, Mark Kennard, Karim Cherkaoui, Kyoungsub Shin, P. Patruno, Weize W. Xiong, Sun Xin
Rok vydání:	2007
Předmět:	Electron mobility Materials science Subthreshold conduction business.industry Transistor Silicon on insulator Manufacturing cost law.invention Planar law MOSFET Electronic engineering Optoelectronics Metal gate business
Zdroj:	ECS Transactions. 6:59-69
ISSN:	1938-6737 1938-5862
DOI:	10.1149/1.2728842
Popis:	MuGFET structure improves local transistor mismatch compared to planar bulk MOSFET. This enables further SRAM cell size reduction. GIDL current is well controlled even with a mid-gap metal gate. MuGFETs have low subthreshold leakage if Lg/Wsi ratio is kept above 1.5. The advantage of MuGFET subthreshold leakage suppression is even more pronounced at higher temperatures. Furthermore MuGFETs are compatible with local strain techniques to improve carrier mobility. The aforementioned qualities, along with low manufacturing cost of single mid- bandgap metal gate, make MuGFET a good candidate to replace planar bulk MOSFET for Low-Power Applications.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::93216e36ced1504bf47832f9c1ca4734 https://doi.org/10.1149/1.2728842 Zobrazit plný text záznamu