Mitigation of Sn Whisker Growth by Small Bi Additions
Autor: | Kyoko Hamasaki, Shijo Nagao, Masanobu Tsujimoto, Katsuaki Suganuma, Tohru Sugahara, Jung-Lae Jo |
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Rok vydání: | 2013 |
Předmět: | |
Zdroj: | Journal of Electronic Materials. 43:1-8 |
ISSN: | 1543-186X 0361-5235 |
DOI: | 10.1007/s11664-013-2706-9 |
Popis: | In this study, the morphological development of electroplated matte Sn and Sn-xBi (x = 0.5 wt.%, 1.0 wt.%, 2.0 wt.%) film surfaces was investigated under diverse testing conditions: 1-year room-temperature storage, high temperature and humidity (HTH), mechanical loading by indentation, and thermal cycling. These small Bi additions prevented Sn whisker formation; no whisker growth was observed on any Sn-xBi surface during either the room-temperature storage or HTH testing. In the indentation loading and thermal cycling tests, short ( |
Databáze: | OpenAIRE |
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