Analysis of SPICE models for SiC MOSFET power devices
| Autor: | Mykhaylo Lobur, Andrzej Napieralski, Lukasz Starzak, Andrii Stefanskyi |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Computer science business.industry Spice Electrical engineering 02 engineering and technology Solid modeling 021001 nanoscience & nanotechnology 01 natural sciences Model complexity chemistry.chemical_compound chemistry 0103 physical sciences MOSFET Hardware_INTEGRATEDCIRCUITS Electronic engineering Silicon carbide Power semiconductor device Power MOSFET 0210 nano-technology business |
| Zdroj: | 2017 14th International Conference The Experience of Designing and Application of CAD Systems in Microelectronics (CADSM). |
| DOI: | 10.1109/cadsm.2017.7916089 |
| Popis: | This work compares four SiC power MOSFET models for SPICE provided by main device manufacturers: STMicroelectronics, CREE and ROHM. Model complexity and structures are analysed. Model accuracy is assessed by comparing simulation results to static output characteristics given in the respective device datasheets. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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