The Influence of High-k Material/SiO2 Gate Stacks on Direct Gate Tunneling Current of Cylindrical Surrounding-Gate MOSFETs
| Autor: | Fatimah A. Noor, Christoforus Bimo, Khairurrijal |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science Condensed matter physics business.industry Mechanical Engineering Gate dielectric Electrical engineering Time-dependent gate oxide breakdown 02 engineering and technology Dielectric 021001 nanoscience & nanotechnology 01 natural sciences Mechanics of Materials Gate oxide 0103 physical sciences General Materials Science Perturbation theory 0210 nano-technology business Metal gate Quantum tunnelling High-κ dielectric |
| Zdroj: | Key Engineering Materials. 709:19-22 |
| ISSN: | 1662-9795 |
| DOI: | 10.4028/www.scientific.net/kem.709.19 |
| Popis: | In this paper, we present a model of gate tunneling current in cylindrical surrounding-gate MOSFETs through dual layer high-k dielectric/SiO2 stacks. The model was derived under a quantum perturbation theory by taking into account both structural and electrical confinement effects. The influences of high-k materials and SiO2 thickness on the gate tunneling current have been studied. The calculated results show that the HfO2 is the most effective high-k material to decrease the gate tunneling current. It is also shown that the gate tunneling current is reduced with the SiO2 thickness. In addition, the obtained tunneling currents are fitted well with those obtained under the self-consistent calculation. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|