The model of carbon induced defects in GaAs

Autor:	L.A. Borisova, Z.L. Akkerman
Rok vydání:	1983
Předmět:	Condensed Matter::Materials Science Crystallography Materials science chemistry Mechanics of Materials Mechanical Engineering chemistry.chemical_element General Materials Science Crystal structure Condensed Matter Physics Acceptor Carbon
Zdroj:	Materials Research Bulletin. 18:1521-1528
ISSN:	0025-5408
DOI:	10.1016/0025-5408(83)90193-9
Popis:	A model of defect states caused by incorporation of carbon in GaAs crystal lattice is proposed. The carbon atoms form three defect states: an acceptor state, C As , and two donor states, C Gs and (C-C) As Thermodynamic calculations of the carbon incorporation in GaAs crystals and films grown from Ga-solutions at 800–1240°C are presented.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::92f78fd5080b68617de9f3406e6c81a8 https://doi.org/10.1016/0025-5408(83)90193-9 Zobrazit plný text záznamu