Improvement of Adhesion of Cubic Boron Nitride Films: Effect of Interlayer and Deposition Parameters
| Autor: | Russell Messier, Qi He, Fan Xiu Lu, Lawrence J. Pilione, Chengming Li |
|---|---|
| Rok vydání: | 2005 |
| Předmět: |
Materials science
Silicon Annealing (metallurgy) Mechanical Engineering Nucleation chemistry.chemical_element Diamond Boron carbide Nitride engineering.material Condensed Matter Physics chemistry.chemical_compound chemistry Mechanics of Materials Boron nitride engineering General Materials Science Thin film Composite material |
| Zdroj: | Materials Science Forum. :3635-3640 |
| ISSN: | 1662-9752 |
| Popis: | Diamond and B4C coatings were used as an interlayer for the growth of cubic boron nitride thin films on c-silicon. By employing a B-C-N gradient layer on top of the B4C interlayer, improved adhesion occured between BN and B4C. A multi-step process after the nucleation of c-BN was found very helpful for improving the adhesion of c-BN on silicon with interlayers. Residual stress of c-BN thin film was significantly decreased by using a new post-deposition annealing treatment. |
| Databáze: | OpenAIRE |
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