Growth and some properties of Ga23PS3 single crystals

Autor:	V. Gountsidou, P. Christidis, A.N. Anagnostopoulos, D.S. Kyriakos
Rok vydání:	1986
Předmět:	Inorganic Chemistry Crystallography Materials science chemistry Absorption spectroscopy Materials Chemistry chemistry.chemical_element Monoclinic symmetry Direct and indirect band gaps Gallium Conductivity Condensed Matter Physics Ampoule
Zdroj:	Journal of Crystal Growth. 76:6-8
ISSN:	0022-0248
DOI:	10.1016/0022-0248(86)90003-5
Popis:	Gallium thiophosphide, Ga23PS3, single crystals were grown by vapour transport with I2, in an ampoule placed in a horizontal furnace. The crystals were n-type and showed a thermally activated conductivity. X-ray measurements revealed a monoclinic symmetry. The optical absorption spectrum indicated a direct band gap of 3.39 eV at room temperature.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::92f0fe7d3d2f2227134fb198f6d0d434 https://doi.org/10.1016/0022-0248(86)90003-5 Zobrazit plný text záznamu