SiGe Epitaxy with Graded Buffer by Ultrahigh Vacuum Chemical Vapor Deposition

Autor:	Xiao-bo Jiang, Huizhen Wu, Binghui Zhao, Lei Wang, Huanming Lu, Duanlin Que, Jingyun Huang, Zhizhen Ye
Rok vydání:	1998
Předmět:	Diffraction Materials science business.industry General Physics and Astronomy Chemical vapor deposition Epitaxy Buffer (optical fiber) symbols.namesake symbols Optoelectronics Growth rate Dislocation business Raman spectroscopy Layer (electronics)
Zdroj:	Chinese Physics Letters. 15:692-694
ISSN:	1741-3540 0256-307X
Popis:	A SiGe/Si epilayer with a linear-step-graded buffer was grown by ultrahigh vacuum chemical vapor deposition technique at a relatively high growth temperature (780° C) and a relatively high growth rate. Almost linear Ge content variation was realized in the buffer layer due to the Ge segregation to the growing surface during epitaxial growth. Double crystal x-ray diffraction and Raman spectroscopy show that the upper layer is fully relaxed. However, the measured results show that the density of dislocation in the composition graded structure is much lower than that in single-step epilayer structures.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::92f0d0bae34b2d77212a2f55c4cf6fed https://doi.org/10.1088/0256-307x/15/9/024 Zobrazit plný text záznamu