Thermal Neutron-Induced Single-Event Upsets in Microcontrollers Containing Boron-10
| Autor: | Jeffrey S. George, Ning Xu, Dolores A. Black, Jeffrey D. Black, Stephen A. Wender, John M. O'Donnell, Elizabeth C. Auden, P. W. Lisowski, Heather Quinn |
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| Rok vydání: | 2020 |
| Předmět: |
Nuclear and High Energy Physics
Materials science 010308 nuclear & particles physics Doping Analytical chemistry chemistry.chemical_element Isotopes of boron Tungsten 01 natural sciences Upset Neutron temperature Nuclear Energy and Engineering chemistry 0103 physical sciences Neutron Static random-access memory Electrical and Electronic Engineering Boron |
| Zdroj: | IEEE Transactions on Nuclear Science. 67:29-37 |
| ISSN: | 1558-1578 0018-9499 |
| DOI: | 10.1109/tns.2019.2951996 |
| Popis: | Single-event upsets (SEUs) were measured in thermal neutron-irradiated microcontrollers with 65- and 130-nm-node static random-access memories (SRAMs). The suspected upset mechanism is charge deposition from the energetic byproducts of 10B thermal neutron capture. Although elemental analysis confirmed that both microcontrollers contain 10B, only the 65-nm node microcontroller exhibited a strong response to thermal neutrons. Monte Carlo simulations were performed to investigate the effects of 11B enrichment on thermal neutron-induced SEUs in a 65-nm SRAM node when boron is present in the p -type well, p -type source and drain, or tungsten plug. Simulations indicate that the byproducts of 10B(n, $\alpha $ ) 7Li reactions are capable of generating sufficient charge to upset a 65-nm SRAM. The highest amount of charge deposition from 10B(n, $\alpha $ ) 7Li reaction byproducts occurs when natural boron is used to dope the p -type source and drain regions. Simulations also show that the SEU cross section is nonnegligible when 11B-enriched boron is used for doping. |
| Databáze: | OpenAIRE |
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