Patent Reviews: 5,000,566; 5,004,310; 5,007,721; 5,134,882; 5,155,553; 5,159,656; 5,137,353; 5,166,813; 5,168,386; 5,170,049; 5,171,994; 5,172,000; 5,172,257; 5,173,598; 5,175,647; 5,175,755; 5,181,012; 5,181,224; 5,182,659; 5,185,647; 5,187,358; 5,187,359; 5,187,360; 5,192,980; 5,198,659; 5,200,861
| Autor: | B. J. Howell, I. J. Abramovitz, S. F. Jacobs, A. Mann, D. L. Sullivan, R. Asthelmer, R. Kingslake, H. Miranda, S. K. Tchejeyan, A. Brunsting, P. M. Kuhn, G. L. Mitchell, W. J. Tomlinson, J. A. Decker, W. H. Lee, R. Prescott, W. Vaughan, D. C. Gilkeson, D. C. Leiner, L. S. Sadovnik, P. Wakeling, M. Handschy, E. Loewen, J. J. J. Staunton, D. E. Williamson, R. L. Hilllard |
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| Rok vydání: | 1993 |
| Předmět: |
Range (particle radiation)
Materials science Physics::Instrumentation and Detectors Condensed Matter::Other business.industry Materials Science (miscellaneous) Photodetector Biasing Astrophysics::Cosmology and Extragalactic Astrophysics Crystal structure Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Industrial and Manufacturing Engineering Semiconductor detector Optics Semiconductor Astrophysics::Solar and Stellar Astrophysics Optoelectronics Business and International Management business Absorption (electromagnetic radiation) Electrical conductor |
| Zdroj: | Applied Optics. 32:4678 |
| ISSN: | 1539-4522 0003-6935 |
| DOI: | 10.1364/ao.32.004678 |
| Popis: | An IR photodetector including an IR semiconductor detector with conductive layers on opposite, parallel surfaces. A semiconductor substrate supports the semiconductor IR detector. A circuit is connected across the semiconductor IR detector to provide a bias voltage and for measuring current flow through the semiconductor IR detector. The semiconductor IR detector has a lattice structure made up of a series of potential wells separated by relatively wide potential barriers such that each well has two confined energy levels. A thin spike barrier is placed in the center of alternate potential wells to tailor the absorption characteristics of the semiconductor IR detector. Multicolor operation is achieved by selecting the appropriate well widths for a first group of potential wells and by placing thin spike barriers in a second group of potential wells that are alternately placed between the wells of the first group. |
| Databáze: | OpenAIRE |
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