| Autor: |
C. Mayeux, J. F. Bresse, C. Besombes, P. Blanconnier, Y. Gao, P. Henoc, C. Dubon-Chevallier |
| Rok vydání: |
1990 |
| Předmět: |
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| Zdroj: |
ChemInform. 21 |
| ISSN: |
0931-7597 |
| DOI: |
10.1002/chin.199030010 |
| Popis: |
A study of the properties of As-doped and undoped GeMoW contacts prepared by different annealing techniques leads to the optimization of a new refractory ohmic contact consisting of an As-doped Ge-layer deposited by electron beam evaporation and sputter-deposited Mo and W films. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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