Effect of lateral structure parameters of SiGe HBTs on synthesized active inductors
Autor: | Dongyue Jin, Wanrong Zhang, Yan-Xiao Zhao, Huang Xin, Hongyun Xie, Qiang Fu |
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Rok vydání: | 2016 |
Předmět: |
Materials science
business.industry Heterojunction bipolar transistor Transistor General Physics and Astronomy 020206 networking & telecommunications 02 engineering and technology Inductor 01 natural sciences law.invention Inductance Quality (physics) law Bicmos process 0103 physical sciences 0202 electrical engineering electronic engineering information engineering Optoelectronics 010306 general physics business Current density Common emitter |
Zdroj: | Chinese Physics B. 25:038501 |
ISSN: | 1674-1056 |
Popis: | The effect of lateral structure parameters of transistors including emitter width, emitter length, and emitter stripe number on the performance parameters of the active inductor (AI), such as the effective inductance Ls, quality factor Q, and self-resonant frequency ω0 is analyzed based on 0.35-μm SiGe BiCMOS process. The simulation results show that for AI operated under fixed current density JC, the HBT lateral structure parameters have significant effect on Ls but little influence on Q and ω0, and the larger Ls can be realized by the narrow, short emitter stripe and few emitter stripes of SiGe HBTs. On the other hand, for AI with fixed HBT size, smaller JC is beneficial for AI to obtain larger Ls, but with a cost of smaller Q and ω0. In addition, under the fixed collector current IC, the larger the size of HBT is, the larger Ls becomes, but the smaller Q and ω0 become. The obtained results provide a reference for selecting geometry of transistors and operational condition in the design of active inductors. |
Databáze: | OpenAIRE |
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