| Autor: |
R. Schulz, T. Bachmann, U. Richter, S. Schippel, E. Glaser |
| Rok vydání: |
1995 |
| Předmět: |
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| Zdroj: |
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 106:281-288 |
| ISSN: |
0168-583X |
| DOI: |
10.1016/0168-583x(95)00719-9 |
| Popis: |
Ion beam induced epitaxial crystallization (IBIEC) during irradiation with high energy ions is investigated in preamorphized InP, GaP and InAs under different conditions of temperature and dose rate. The maximum thicknesses of the layers crystallized are 170 nm (InAs), 120 nm (InP) and 70 nm (GaP), showing that the extent of single-crystalline regrowth is much greater than that achieved by thermal crystallization. Twinned regrowth typical for thermal crystallization is suppressed by ion irradiation, even at temperatures where thermal crystallization proceeds. The maximum thickness of the IBIEC layer cannot be increased by applying both higher doses and/or higher implantation temperatures. This result is explained by the fact that IBIEC is “blocked” by ion induced random nucleation and growth of crystallites within the amorphous layers. Interfacial amorphization induced by ion beams (IBIIA) is proved in InAs. The transition from crystallization to amorphization due to a decrease in the temperature, an increase in the dose rate or an increase in the nuclear energy deposition is in good agreement with the results for Si and Ge. Critical temperatures for this transition in the considered compound semiconductors are estimated, respectively. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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