MOCVD of bandgap-engineered HgCdTe p-n-N-P dual-band infrared detector arrays
| Autor: | S. L. Barnes, P. O'Dette, Pradip Mitra, Marion B. Reine, M. H. Weiler, Allen W. Hairston, R. Starr, B. L. Musicant, F. C. Case, K. Kuhler |
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| Rok vydání: | 1997 |
| Předmět: |
Materials science
business.industry Band gap Detector Heterojunction Condensed Matter Physics Electronic Optical and Magnetic Materials Photodiode law.invention Secondary ion mass spectrometry Optics law Materials Chemistry Optoelectronics Dry etching Metalorganic vapour phase epitaxy Infrared detector Electrical and Electronic Engineering business |
| Zdroj: | Journal of Electronic Materials. 26:482-487 |
| ISSN: | 1543-186X 0361-5235 |
| DOI: | 10.1007/s11664-997-0181-x |
| Popis: | We report the implementation of recent advances in metalorganic chemical vapor deposition (MOCVD) for in situ growth of four-layer HgCdTe mid wave/ long wave (MW/LW) simultaneous dual-band 64 × 64 infrared detector arrays. This independently accessed, simultaneous, double-heterojunction p-n-N-P dualband detector has two back-to-back stacked photodiodes grown on CdZnTe (100) substrates. The LW photodiode is a p-on-n heterojunction grown on top of an MW N-on-P heterojunction photodiode. Secondary ion mass spectrometry depth profiles of these 28 µ m thick p-n-N-P dual-band films show four well-defined regions of alloy composition and doping, and agree well with the device design. 64 × 64 arrays of dual-band detectors were fabricated from these films using electron cyclotron resonance dry etching and CdTe passivation, and hybridized to a dual-band readout chip. Two bump inter-connects in each unit cell provide independent electrical access to the back-to-back MW and LW photodiodes, and allow the MW and LW photocurrents to be separate and independent. The dualband infrared focal plane arrays (IRFPAs) spectral response data at 78K are well-behaved and are fully consistent with that observed in individual singleband LW p-on-n and MW N-on-P heterojunction devices of the same design. The hybridized 64 × 64 duai-band FPAs have MW and LW average in-band quantum efficiencies of 79 and 67%, and median D* values of 4.8 × 1011 and 7.1 × 1010 cm-√Hz/W, in the respective spectral bands at 78K. The data demonstrate that MOCVD has progressed significantly toward being a practical and viable vapor phase in situ growth technology for advanced bandgap-engineered HgCdTe detector arrays. |
| Databáze: | OpenAIRE |
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