Copper Diffusion in Gallium Arsenide Solar Cells for Space Applications
| Autor: | Van Leest, R.H., De Kleijne, K., Bauhuis, G.J., Mulder, P., Van Der Heijden, R., Bongers, E., Vlieg, E., Schermer, J.J. |
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| Jazyk: | angličtina |
| Rok vydání: | 2015 |
| Předmět: | |
| DOI: | 10.4229/eupvsec20152015-4cv.3.5 |
| Popis: | 31st European Photovoltaic Solar Energy Conference and Exhibition; 1422-1425 Thin-film III-V solar cells provide excellent characteristics for application in space solar panels. However, the currently applied copper stabilization foil might diffuse into the active solar cell material, potentially inducing detrimental damage to the solar cell. In four different accelerated life time tests it was found that copper diffusion indeed has a potentially detrimental effect on device performance. A reduction in Jsc is observed for deep junction cells, due to a minority carrier life time reduction. More noticeably Voc is affected in shallow junction cells, indicating enhanced non-radiative recombination due to introduction of Cu trap levels in the depletion region. Contact layers with high carrier densities are found to be unfavourable, as high dopant concentrations negatively influence the material quality of the layer. Additionally it was found that the Au contact/mirror functions as a barrier to Cu diffusion but that it will break down eventually. A dependence on the Cu thickness was also observed, but further experiments are required to explain this dependence. Although an optimized device design can inhibit Cu diffusion, it is still advisable to either implement a suitable diffusion barrier or find an alternative metal for the handling and support foil. |
| Databáze: | OpenAIRE |
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