Orientation control of epitaxial Ge thin films growth on SrTiO3 (100) by ultrahigh vacuum sputtering
| Autor: | Chee Mang Ng, Jianwei Chai, Ming Yang, Ten It Wong, Shijie Wang, Wensheng Deng, Yuan Ping Feng, Anyan Du |
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| Rok vydání: | 2012 |
| Předmět: |
Materials science
business.industry Metals and Alloys Surfaces and Interfaces Substrate (electronics) Epitaxy Surfaces Coatings and Films Electronic Optical and Magnetic Materials Orientation control Crystallography Sputtering Transmission electron microscopy X-ray crystallography Materials Chemistry Optoelectronics Thin film business |
| Zdroj: | Thin Solid Films. 520:4880-4883 |
| ISSN: | 0040-6090 |
| Popis: | We report the orientation control of crystalline Ge (111) and Ge (001) growth on SrTiO 3 (100) substrate by adjusting the temperature of substrate. It is found that the substrate temperature plays an important role for the formation of crystalline Ge with different surface orientations and interfacial chemical configuration during the sputtering process. At 500 °C, Ge (111) with good crystalline quality is formed, while Ge (001) is preferably grown on SrTiO 3 substrate at 650 °C. Our results show the possibility of manipulating the surface orientations during Ge growth on SrTiO 3 by controlling the substrate temperatures. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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