| Autor: |
My T. T. Do, M. Aizengendler, Petrisa Eckle, Lap Van Dao, A. Stanco, Peter Hannaford, Peter J. Reece |
| Rok vydání: |
2006 |
| Předmět: |
|
| Zdroj: |
Conference on Optoelectronic and Microelectronic Materials and Devices, 2004.. |
| DOI: |
10.1109/commad.2004.1577536 |
| Popis: |
Multidimensional nonlinear coherence spectroscopy based on spectrally resolved femtosecond 2-colour 3-pulse photon echo measurements has been used to investigate the carrier dynamics and energy structure of porous silicon an - indirect band gap material. Short times are found for electron localization (∼ 500 fs) and electron hopping (∼ 3 ps), which are dependent on the porosity of the sample. A spin-orbit energy splitting for the conduction and valence band can be deduced |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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