SOI MOSFET with grounded body potential by using the silicon direct bonding (SDB) technology

Autor:	Sung-Won Kang, Jong-Son Lyu, Won-Gu Kang, Jin-Hyo Lee, Sang Won Kang
Rok vydání:	2002
Předmět:	Materials science Silicon business.industry Wafer bonding Electrical engineering chemistry.chemical_element Silicon on insulator Direct bonding Substrate (electronics) chemistry MOSFET Optoelectronics Breakdown voltage business Voltage
Zdroj:	Proceedings of 1993 IEEE International SOI Conference.
DOI:	10.1109/soi.1993.344574
Popis:	N-channel SOI MOSFET was fabricated by using the silicon direct bonding (SDB) technology, where its body was tied with a grounded p/sup +/ polysilicon for eliminating the substrate floating effect. Fabricated SOI MOSFETs show no kinks on their drain current characteristics and much higher breakdown voltage for lower gate voltages, as compared with SOI MOSFETs with a floating body. >
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::92aabb90e45ec9817a00fc5e1846fb38 https://doi.org/10.1109/soi.1993.344574 Zobrazit plný text záznamu