Single Event Effects in Power MOSFETs and SRAMs Due to 3 MeV, 14 MeV and Fission Neutrons

Autor:	Alex Hands, PA Morris, Clive Dyer, Keith Ryden, Pete Truscott
Rok vydání:	2011
Předmět:	Physics Nuclear physics Nuclear and High Energy Physics Nuclear Energy and Engineering Single event upset MOSFET Neutron Static random-access memory Electrical and Electronic Engineering Power MOSFET Radiation Neutron temperature Upset
Zdroj:	IEEE Transactions on Nuclear Science. 58:952-959
ISSN:	1558-1578 0018-9499
DOI:	10.1109/tns.2011.2106142
Popis:	Various SRAM and MOSFET devices were exposed to 3 MeV and 14 MeV neutrons at a fusion facility and to a fission neutron spectrum with a californium-252 source. Single event burnout (SEB) was observed in several of the MOSFETs in all three environments-the first time this phenomenon has been observed at neutron energies below 10 MeV. In addition to observing single event upsets (SEU) and single event latchup (SEL) in the SRAMs, two devices experienced significant multiple cell upset (MCU) effects which dominated the upset rate. The physical mechanisms underlying these phenomena and the consequences for various radiation environments are discussed.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::929dc515c16c1f89dc17a457752fe325 https://doi.org/10.1109/tns.2011.2106142 Zobrazit plný text záznamu