324*487 Schottky-barrier infrared imager

Autor: Y. Moriyama, Shigeru Tohyama, N. Takada, Kazuo Konuma, S. Yamagata, K. Masubuchi, T. Tanaka, N. Yoshioka, E. Oda, Nobukazu Teranishi
Rok vydání: 1990
Předmět:
Zdroj: IEEE Transactions on Electron Devices. 37:629-635
ISSN: 0018-9383
DOI: 10.1109/16.47766
Popis: A standard TV-compatible PtSi Schottky-barrier infrared imager is described. The imager is a 324*487 element area array and has an electronic shutter function. Although the pixel is 42*21 mu m, a large fill factor of 42% is obtained, using a 1.5- mu m minimum design rule and a two-level polysilicon layer, and two-level aluminum layer structure. Using face-down bonding technology, it was possible to reduce the package size to 60% of the conventional ceramic package size. Due to optimization of the Schottky-barrier diode process and the diode structure, the noise equivalent temperature difference is as small as 0.1 K at f/1. >
Databáze: OpenAIRE