Vacuum beam studies of fluorocarbon radicals and argon ions on Si and SiO2 surfaces
| Autor: | Yoshie Kimura, David B. Graves, J. W. Coburn |
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| Rok vydání: | 2004 |
| Předmět: | |
| Zdroj: | Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 22:2508-2516 |
| ISSN: | 1520-8559 0734-2101 |
| DOI: | 10.1116/1.1810166 |
| Popis: | Si and SiO2 were exposed to c-C4F8 with and without Ar+, and to a mixture of characterized CxFy radical and stable species with and without Ar+. The mixture of CxFy radical and stable species was created from c-C4F8 and Ar plasma and included CF, CF2, CF3, and various heavy CxFy species. The neutral fluorocarbon flux to Ar+ flux and the energy of the Ar+ were varied. During the exposure, etch/deposition rates were measured and the flux of CxFy species leaving the surface for various conditions were qualitatively determined. The following were observed: (1) c-C4F8 is an etchant with Ar+ bombardment; (2) the CF, CF2, and CF3 species flux cannot account for the observed mass increase during depositing conditions; (3) CF2 and CF3 species are net products during etching conditions; and (4) the flux of large CxFy species leaving the surface is smaller during etching conditions than for depositing conditions. These observations imply that large CxFy species play a significant role in the surface chemistry. |
| Databáze: | OpenAIRE |
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