S2-semipolar GaN grown by HVPE on a non-polar m-plane sapphire: Features of growth and structural, morphological, and optical properties

Autor:	P.V. Seredin, N.S. Buylov, D.L. Goloshchapov, S.A. Ivkov, E.P. Matyukhina, I.N. Arsentyev, A.V. Nashchekin, Sh.Sh. Sharofidinov, A.M. Mizerov, E.V. Pirogov, M.S. Sobolev
Rok vydání:	2022
Předmět:	Inorganic Chemistry Organic Chemistry Electrical and Electronic Engineering Physical and Theoretical Chemistry Atomic and Molecular Physics and Optics Spectroscopy Electronic Optical and Magnetic Materials
Zdroj:	Optical Materials. 129:112507
ISSN:	0925-3467
DOI:	10.1016/j.optmat.2022.112507
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::928d8503130c1f1e896e460727200686 https://doi.org/10.1016/j.optmat.2022.112507 Zobrazit plný text záznamu Full Text from ScienceDirect