Low dielectric constant materials for advanced interconnects

Autor:	Michael M. Morgen, Taiheui Cho, E. Todd, Chuan Hu, Jie-Hua Zhao, Paul S. Ho
Rok vydání:	1999
Předmět:	chemistry.chemical_compound Materials science chemistry Silicon dioxide General Engineering Electronic engineering General Materials Science Dielectric Engineering physics Characterization (materials science) High-κ dielectric
Zdroj:	JOM. 51:37-40
ISSN:	1543-1851 1047-4838
DOI:	10.1007/s11837-999-0158-8
Popis:	Materials with low dielectric constants are being developed to replace silicon dioxide as interlevel dielectrics. This paper discusses material issues and the characterization of low-k materials for integration into advanced interconnects. Measurement techniques for the characterization of low-k films are discussed, and the results for several classes of low-k materials are presented. The properties of these materials are discussed in relation to structure-property relationships.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::928a485ff9a571e41133b0b4eab8346d https://doi.org/10.1007/s11837-999-0158-8 Zobrazit plný text záznamu Full text from SpringerLink