Modeling of amorphous InGaZnO thin film transistors using an empirical mobility function based on the exponential deep and tail states
| Autor: | Chi-Sun Hwang, Sung Mook Chung, Jaeheon Shin, Woo-Seok Cheong |
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| Rok vydání: | 2012 |
| Předmět: |
Materials science
business.industry Transistor Metals and Alloys Amorphous oxide Surfaces and Interfaces Function (mathematics) Exponential density Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention Threshold voltage Amorphous solid Exponential function Thin-film transistor law Materials Chemistry Optoelectronics business |
| Zdroj: | Thin Solid Films. 520:3800-3802 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/j.tsf.2011.06.088 |
| Popis: | We demonstrate that the voltage-dependent average mobility of In–Ga–Zn–O (IGZO) thin-film transistors (TFTs) can be excellently fitted by an empirical mobility function based on the exponential density of deep and tail states. The proposed mobility function needs only 5 parameters and does not need the concept of the threshold voltage which is inherently ambiguous in amorphous oxide TFTs. Both the transfer and output curves of the device are well reproduced by integrating the mobility function. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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