Optical and Microstructural Investigation of Heavy B-Doping Effects in Sublimation-Grown 3C-SiC
| Autor: | Sigurd Hovden, Mikael Syväjärvi, Alexander Azarov, Quan-Bao Ma, Daniel Nilsen Wright, Ole Martin Løvvik, Annett Thøgersen, Valdas Jokubavicius, Spyros Diplas, Augustinas Galeckas, Bengt Gunnar Svensson, Jianwu Sun, Patricia Almeida Carvalho |
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| Rok vydání: | 2018 |
| Předmět: |
inorganic chemicals
010302 applied physics Photoluminescence Materials science business.industry Mechanical Engineering Doping 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Acceptor Mechanics of Materials 0103 physical sciences Boron doping Optoelectronics General Materials Science Sublimation (phase transition) 0210 nano-technology business |
| Zdroj: | Materials Science Forum. 924:221-224 |
| ISSN: | 1662-9752 |
| DOI: | 10.4028/www.scientific.net/msf.924.221 |
| Popis: | In this work, a complementary microstructural and optical approach is used to define processing conditions favorable for the formation of deep boron-related acceptor centers that may provide a pathway for achieving an intermediate band behavior in highly B-doped 3C-SiC. The crystallinity, boron solubility and precipitation mechanisms in sublimation-grown 3C-SiC crystals implanted to 1-3 at.% B concentrations were investigated by STEM. The revealed defect formation and boron precipitation trends upon thermal treatment in the range 1100-2000°C have been cross-correlated with the optical characterization results provided by imaging PL spectroscopy. We discuss optical activity of the implanted B ions in terms of both shallow acceptors and deep D-centers, a complex formed by a boron atom and a carbon vacancy, and associate the observed spectral developments upon annealing with the strong temperature dependence of the D-center formation efficiency, which is further enhanced by the presence of implantation-induced defects. |
| Databáze: | OpenAIRE |
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