Evaluating the material properties of underfill for a reliable 3D TSV integration package using numerical analysis
| Autor: | Yong-Sung Eom, Kwang-Seong Choi, Insu Jeon, Jong-Tae Moon, Hyungseok Yoon, Hyun-Cheol Bae |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Materials science Through-silicon via Numerical analysis 02 engineering and technology Deformation (meteorology) 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Atomic and Molecular Physics and Optics Finite element method Surfaces Coatings and Films Electronic Optical and Magnetic Materials Volume (thermodynamics) Surface-area-to-volume ratio 0103 physical sciences Electronic engineering Electrical and Electronic Engineering Composite material 0210 nano-technology Safety Risk Reliability and Quality Material properties Flip chip |
| Zdroj: | Microelectronics Reliability. 71:41-50 |
| ISSN: | 0026-2714 |
| DOI: | 10.1016/j.microrel.2017.02.010 |
| Popis: | The effects of the material properties of the underfill layer on thermal stress and deformation in 3D through silicon via (TSV) integration packages were evaluated through numerical analysis. Sample TSV packages with underfill composed of different silica volume ratios were fabricated. The sample packages were used to measure thermal deformation using a Moire interferometer. Also, a cross-section from these samples was used for 2D finite element modeling and numerical analysis to obtain its thermal deformation. The experimental and numerical results were compared to confirm the suitability of the numerical technique in this research. A four-chip-stacked TSV integration package, which includes underfill layers of four different silica volume ratios, was proposed and designed. The diagonal part of the TSV integration packages were three dimensionally modeled and adopted for numerical analysis. Among the underfill with different silica volume ratios in the designed packages, a silica volume ratio of around 20% shows the best performance for a reliable flip chip bonding process, effectively minimizing thermal stress and deformation in the package. |
| Databáze: | OpenAIRE |
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