Demonstration of ultraviolet-B AlGaN-based laser diode operation with a peak light output power of 150 mW by improving injection efficiency through polarization charge modulation
Autor: | Ryosuke Kondo, Ayumu Yabutani, Tomoya Omori, Kazuki Yamada, Eri Matsubara, Ryota Hasegawa, Toma Nishibayashi, Sho Iwayama, Tetsuya Takeuchi, Satoshi Kamiyama, Hideto Miyake, Motoaki Iwaya |
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Rok vydání: | 2022 |
Předmět: | |
Zdroj: | Applied Physics Letters. 121:253501 |
ISSN: | 1077-3118 0003-6951 |
DOI: | 10.1063/5.0135033 |
Popis: | In this study, AlGaN-based ultraviolet-B band laser diodes with 150-mW peak output power in pulsed operation were demonstrated at room temperature. The oscillation wavelength, differential quantum efficiency, and slope efficiency of a laser diode were 300 nm, 3.6%, and 0.15 W/A, respectively. These results were obtained by increasing the injection efficiency and decreasing the positive fixed polarization charge formed at the interface between a p-side waveguide layer and an electron blocking layer when polarization doping is formed in a p-AlGaN cladding layer. |
Databáze: | OpenAIRE |
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