| Autor: |
Ralf Pijper, Nicole Wils, Rob van Dalen, Joost Melai, Hans Tuinhout, P.H.C. Magnee, Ivo Pouwel, Pieter Weijs, Anurag Vohra, L. F. Tiemeijer, Ihor Brunets, Nicolae Cazana |
| Rok vydání: |
2015 |
| Předmět: |
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| Zdroj: |
2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM. |
| DOI: |
10.1109/bctm.2015.7340566 |
| Popis: |
QUBiC generation 9 is NXPs new BiCMOS platform process for high performance RF applications in the mmWave domain. We introduced a new MIM capacitor option and paid special attention to improving the RF noise performance of the HBTs. The extrinsic base resistance has been decreased by several methods, most importantly by self-alignment of the extrinsic base connection to the emitter. The new process is robust and manufacturable and it results in improved noise performance without significantly adding to process complexity. We present results from a discrete transistor that is brought to market to replace GaAs pHEMTs for Ku band LNA applications. The second example is a prototype LNA for the Ka band, NFmin improves with 0.3 dB to 2.5 dB at 30 GHz. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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